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BCP 69-25 H6327 Datasheet
Datasheet specifications
| Datasheet's name | BCP 69-25 H6327 |
|---|---|
| File size | 70.002 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet BCP 69-25 H6327 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Infineon Technologies BCP 69-25 H6327
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 1A
- Power Dissipation (Pd): 3W
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 250@500mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@1A,100mA
- Package: SOT-223
- Manufacturer: Infineon Technologies
